High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering.
Identifieur interne : 000D41 ( Main/Exploration ); précédent : 000D40; suivant : 000D42High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering.
Auteurs : RBID : pubmed:23163608Abstract
Indium zinc oxide thin-film transistors are fabricated via a precursor in solution route on silicon substrates with silicon dioxide gate dielectric. It is found that the extracted mobility rises, peaks, and then decreases with increasing precursor concentration instead of rising and saturating. Investigation with scanning probe techniques reveals full thickness variations within the film which are assumed to adversely affect charge transport. Additional layers are coated, and the extracted mobility is observed to increase up to 19.7 cm(2) V(-1) s(-1). The reasons for this are examined in detail by direct imaging with scanning tunneling microscopy and extracting electron density profiles from X-ray reflection measurements. It is found that the optimal concentration for single layer films is suboptimal when coating multiple layers and in fact using many layers of very low concentrations of precursor in the solution, leading to a dense, defect and void free film, affording the highest mobilities. A consistent qualitative model of layer formation is developed explaining how the morphology of the film develops as the concentration of precursor in the initial solution is varied.
DOI: 10.1021/am302004j
PubMed: 23163608
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering.</title><author><name sortKey="Walker, Daniel E" uniqKey="Walker D">Daniel E Walker</name><affiliation wicri:level="3"><nlm:affiliation>Technical University of Darmstadt, Department of Materials Science, 64287 Darmstadt, Germany. walker@e-mat.tu-darmstadt.de</nlm:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Technical University of Darmstadt, Department of Materials Science, 64287 Darmstadt</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Darmstadt</region><settlement type="city">Darmstadt</settlement></placeName></affiliation></author><author><name sortKey="Major, Marton" uniqKey="Major M">Marton Major</name></author><author><name sortKey="Yazdi, Mehrdad Baghaie" uniqKey="Yazdi M">Mehrdad Baghaie Yazdi</name></author><author><name sortKey="Klyszcz, Andreas" uniqKey="Klyszcz A">Andreas Klyszcz</name></author><author><name sortKey="Haeming, Marc" uniqKey="Haeming M">Marc Haeming</name></author><author><name sortKey="Bonrad, Klaus" uniqKey="Bonrad K">Klaus Bonrad</name></author><author><name sortKey="Melzer, Christian" uniqKey="Melzer C">Christian Melzer</name></author><author><name sortKey="Donner, Wolfgang" uniqKey="Donner W">Wolfgang Donner</name></author><author><name sortKey="Von Seggern, Heinz" uniqKey="Von Seggern H">Heinz von Seggern</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1021/am302004j</idno><idno type="RBID">pubmed:23163608</idno><idno type="pmid">23163608</idno><idno type="wicri:Area/Main/Corpus">000937</idno><idno type="wicri:Area/Main/Curation">000937</idno><idno type="wicri:Area/Main/Exploration">000D41</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium zinc oxide thin-film transistors are fabricated via a precursor in solution route on silicon substrates with silicon dioxide gate dielectric. It is found that the extracted mobility rises, peaks, and then decreases with increasing precursor concentration instead of rising and saturating. Investigation with scanning probe techniques reveals full thickness variations within the film which are assumed to adversely affect charge transport. Additional layers are coated, and the extracted mobility is observed to increase up to 19.7 cm(2) V(-1) s(-1). The reasons for this are examined in detail by direct imaging with scanning tunneling microscopy and extracting electron density profiles from X-ray reflection measurements. It is found that the optimal concentration for single layer films is suboptimal when coating multiple layers and in fact using many layers of very low concentrations of precursor in the solution, leading to a dense, defect and void free film, affording the highest mobilities. A consistent qualitative model of layer formation is developed explaining how the morphology of the film develops as the concentration of precursor in the initial solution is varied.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">23163608</PMID><DateCreated><Year>2012</Year><Month>12</Month><Day>26</Day></DateCreated><DateCompleted><Year>2013</Year><Month>06</Month><Day>05</Day></DateCompleted><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1944-8252</ISSN><JournalIssue CitedMedium="Internet"><Volume>4</Volume><Issue>12</Issue><PubDate><Year>2012</Year><Month>Dec</Month></PubDate></JournalIssue><Title>ACS applied materials & interfaces</Title><ISOAbbreviation>ACS Appl Mater Interfaces</ISOAbbreviation></Journal><ArticleTitle>High mobility indium zinc oxide thin film field-effect transistors by semiconductor layer engineering.</ArticleTitle><Pagination><MedlinePgn>6835-41</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1021/am302004j</ELocationID><Abstract><AbstractText>Indium zinc oxide thin-film transistors are fabricated via a precursor in solution route on silicon substrates with silicon dioxide gate dielectric. It is found that the extracted mobility rises, peaks, and then decreases with increasing precursor concentration instead of rising and saturating. Investigation with scanning probe techniques reveals full thickness variations within the film which are assumed to adversely affect charge transport. Additional layers are coated, and the extracted mobility is observed to increase up to 19.7 cm(2) V(-1) s(-1). The reasons for this are examined in detail by direct imaging with scanning tunneling microscopy and extracting electron density profiles from X-ray reflection measurements. It is found that the optimal concentration for single layer films is suboptimal when coating multiple layers and in fact using many layers of very low concentrations of precursor in the solution, leading to a dense, defect and void free film, affording the highest mobilities. A consistent qualitative model of layer formation is developed explaining how the morphology of the film develops as the concentration of precursor in the initial solution is varied.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Walker</LastName><ForeName>Daniel E</ForeName><Initials>DE</Initials><Affiliation>Technical University of Darmstadt, Department of Materials Science, 64287 Darmstadt, Germany. walker@e-mat.tu-darmstadt.de</Affiliation></Author><Author ValidYN="Y"><LastName>Major</LastName><ForeName>Marton</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Yazdi</LastName><ForeName>Mehrdad Baghaie</ForeName><Initials>MB</Initials></Author><Author ValidYN="Y"><LastName>Klyszcz</LastName><ForeName>Andreas</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Haeming</LastName><ForeName>Marc</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Bonrad</LastName><ForeName>Klaus</ForeName><Initials>K</Initials></Author><Author ValidYN="Y"><LastName>Melzer</LastName><ForeName>Christian</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Donner</LastName><ForeName>Wolfgang</ForeName><Initials>W</Initials></Author><Author ValidYN="Y"><LastName>von Seggern</LastName><ForeName>Heinz</ForeName><Initials>H</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>11</Month><Day>30</Day></ArticleDate></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>ACS Appl Mater Interfaces</MedlineTA><NlmUniqueID>101504991</NlmUniqueID><ISSNLinking>1944-8244</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>11</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>11</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>11</Month><Day>21</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>11</Month><Day>21</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/am302004j</ArticleId><ArticleId IdType="pubmed">23163608</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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